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AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET Features
- Simple Drive Requirement - Low On-Resistance - Full Bridge Application on LCD Monitor Inverter - Pb Free Plating Product
General Description
The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Product Summary
CH N P BVDSS (V) 30 -30 RDS(ON) (m) 40 70 ID (A) 4.3 -3.3
Pin Assignments
N1G N1D/P1D N1S/N2S N2G
1 2 3 4 8 7 6 5
Pin Descriptions
P1G P1S/P2S N2D/P2D P2G
Pin Name N1G N1D/P1D N1S/N2S N2G P2G N2D/P2D P1S/P2S P1G
X Packing
Description Gate (NMOS1) Drain(NMOS1) / Drain(PMOS1) Source(NMOS1) / Source(NMOS2) Gate (NMOS2) Gate (PMOS2) Drain(NMOS2) / Drain(PMOS2) Source(PMOS1) / Source(PMOS2) Gate (PMOS1)
SO-8
Ordering information
AX Feature F :MOSFET PN 9902M X
Package S: SO-8
Blank : Tube or Bulk A : Tape & Reel
Block Diagram
P1S P1G P1N1D N1G N1S N2S P2N2D N2G P2S P2G
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Sep 22, 2005 1/8
AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings
Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range N-Channel P-Channel 30 -30 12 12 TA=25C 4.3 -3.3 TA=70C 3.4 -2.6 20 -20 TA=25C 1.38 0.01 -55 to 150 -55 to 150 Units V A A W W/C C C
Thermal Data
Symbol RJA Parameter Thermal Resistance Junction-Ambient (Note 1) Max. Value 90 Units C/W
Electrical Characteristics (TJ=25C unless otherwise specified)
Symbol BVDSS Parameter Drain-Source breakdown Voltage Test Conditions VGS=0V, ID=250uA VGS=0V, ID=-250uA Reference to 25 C, BVDSS/ Breakdown Voltage Temperature ID=1mA Coefficient TJ Reference to 25 C, ID=-1mA VGS=10V, ID=5A VGS=4.5V, ID=4A VGS=2.5V, ID=2A Static Drain-Source RDS(ON) On-Resistance (Note 3) VGS=-10V, ID=-4A VGS=-4.5V, ID=-3A VGS=-2.5V, ID=-2A VDS= VGS, ID=250uA VGS(th) Gate-Threshold Voltage VDS= VGS, ID=-250uA VDS=5V, ID=4A gfs Forward Transconductance VDS=-5V, ID=-3A TJ=25C VDS=30V, VGS=0V Drain-Source Leakage TJ=70C VDS=24V, VGS=0V IDSS Current TJ=25C VDS=-30V, VGS=0V TJ=70C VDS=-24V, VGS=0V IGSS Qg Qgs Qgd Gate-Source Leakage Total Gate Charge (Note 3) Gate-Source Charge Gate-Drain ("Miller") Charge VGS=12V N-Channel VDS=24V, VGS=4.5V ID=4A P-Channel VDS=-24V, VGS=-4.5V ID=-3A CH N P N P N Limits Min. Typ. 30 -30 0.5 -0.5 0.03 -0.02 13 8 9 10 1.6 2 4 3 Max. V/C 40 50 60 70 90 120 1 25 -1 -25 100 100 15 16 Unit V
m
P N P N P N P N P N P N P N P
V S
uA
nA
nC
Anachip Corp. www.anachip.com.tw 2/8
Rev. 1.0
Sep 22, 2005
AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET Electrical Characteristics (TJ=25C unless otherwise specified)
Symbol td(on) tr td(off) tf Ciss Coss Crss Parameter Turn-On Delay Time (Note 3) Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions N-Channel VDS=15V, VGS=5V ID=1A, RG=3.3, RD=15 P-Channel VDS=-15V, VGS=-5V ID=-1A, RG=3.3, RD=15 N-Channel VGS=0V, VDS=25V f=1.0MHz P-Channel VGS=0V, VDS=-25V f=1.0MHz CH N P N P N P N P N P N P N P Limits Min. Typ. 8 8 9 9 17 25 5 14 630 690 140 170 65 75 Max. 1000 1100 Unit
ns
pF
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage (Note 3) Reverse Recovery Time Reverse Recovery Charge
2
Test Conditions IS=1.2A, VGS=0V IS=-1.2A, VGS=0V N-Channel IS=4A, VGS=0V dl/dt=100A/s P-Channel IS=-3A, VGS=0V dl/dt=-100A/s
CH N P N P N P
Limits Min. Typ. 17 25 9 20
Max. 1.2 -1.2 -
Unit V ns nC
Note 1: Surface Mounted on 1 in copper pad of FR4 board; t 10sec; 186C/W when mounted on Min. copper pad. Note 2: Pulse width limited by Max. junction temperature Note 3: Pulse width < 300us, duty cycle < 2%.
Anachip Corp. www.anachip.com.tw 3/8
Rev. 1.0
Sep 22, 2005
AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (N-Channel)
Anachip Corp. www.anachip.com.tw 4/8
Rev. 1.0
Sep 22, 2005
AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (N-Channel) (Continued)
Anachip Corp. www.anachip.com.tw 5/8
Rev. 1.0
Sep 22, 2005
AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (P-Channel)
Anachip Corp. www.anachip.com.tw 6/8
Rev. 1.0
Sep 22, 2005
AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (P-Channel) (Continued)
Anachip Corp. www.anachip.com.tw 7/8
Rev. 1.0
Sep 22, 2005
AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET Marking Information
SO-8L
( Top View )
8
Logo Part Number
9902M AA Y W X
1
Lot code: "A~Z": 01~26; "A~Z": 27~52 Week code: "A~Z": 01~26; "A~Z": 27~52 Year code: "4" =2004 Factory code ~
Package Information
Package Type: SO-8L
D
8
7
6
5 E1 E
1 2 e 3 B 4 DETAIL A L
A1
A
C
DETAIL A
1. All Dimensions Are in Millimeters. 2. Dimension Does Not Include Mold Protrusions.
Symbol A A1 B C D E E1 L e
Dimensions In Millimeters Min. Nom. Max. 1.35 1.55 1.75 0.10 0.18 0.25 0.33 0.41 0.51 0.19 0.22 0.25 4.80 4.90 5.00 5.80 6.15 6.50 3.80 3.90 4.00 0.38 0.71 1.27 o o o 0 4 8 1.27 TYP.
Anachip Corp. www.anachip.com.tw 8/8
Rev. 1.0
Sep 22, 2005

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